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Self-assembled Indium-gallium-zinc-oxide artificial synaptic transistors have been fabricated.The paired-pulse-induced responses of such transistors have been demonstrated and it is surprisingly similar to the paired-pulse facilitation of biological synapses.A positive voltage pulse (spike) applied on the gate electrode promotes protons into the SiO2/IGZO interface, and the protons are gradually released after the pulse is removed.When the synaptic transistor is stimulated with a paired of electrical pulses,the drain-to-source current induced by the latter pulse is larger than that induced by the former pulse.Such behavior becomes weaken when the interval time between two adjacent pulses increases, while with longer pulse duration, this behavior would strengthen gradually.The effect of environmental temperatures on PPF is discussed in detail.