A theoretical study on high-performance silicon nanowire phototransistors

来源 :8th International Conference on Nanophotonics(2015年第八届国际纳米光子 | 被引量 : 0次 | 上传用户：golf

【摘要】

：

　　Optimizing the performance of photodetectors for high speed,high gain and lower power optoelectronic applications is a challenging task.Conventional unity-g

【作者】

：

XingyanZhao;SiewLiTan;YapingDan;

【机构】

：

University of Michigan-Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University,

【出处】

：

8th International Conference on Nanophotonics(2015年第八届国际纳米光子

【发表日期】

：

2015年期

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论文部分内容阅读

　　Optimizing the performance of photodetectors for high speed,high gain and lower power optoelectronic applications is a challenging task.Conventional unity-gain p-i-n photodiodes and high-gain avalanche photodiodes often exhibit tradeoffs between speed,gain,power and signal-to-noise performance1.

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A theoretical study on high-performance silicon nanowire phototransistors

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