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Sn-doped AlN nanorod arrays were grown on Si substrate by doping of nonmagnetic element Sn via a catalyst-free chemical vapor deposition (CVD) method.X-ray diffraction (XRD), X-ray photoemission spectroscopy (XPS), scanning electron microscopy (SEM), Energy dispersive x-ray spectroscopy (EDS), photoluminescence (PL) were employed to characterize the structure and morphology of the products.EDS and XPS demonstrated that Sn was successfully doped into the AlN Nanorods.Sn-doped AlN showed a highly uniform and densely packed array of nanorods with typical diameters of 50-80nm and lengths up to 150-200nm.The magnetic measurement by Vibration Sample Magnetometer (VSM) demonstrated that Sn-doped AlN DMSs exhibited RT ferromagnetism.It is suggested that the RT ferromagnetism caused by Sn doping is ascribed to defects which play an important role for ferromagnetic order in Sn-doped AlN.