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  5. Band Gap Engineering of Atomic Layer Semiconductor Nanosheets

Band Gap Engineering of Atomic Layer Semiconductor Nanosheets

来源 :The 6th International Conference on Nanoscience and Technolo | 被引量 : 0次 | 上传用户：sxhh122
【摘 要】
：
Transition-metal dichalcogenides(TMDs),such as MoS2,MoSe2,WS2,and WSe2,have recently attracted considerable interest as a new class of atomically thin 2D layered materials(2DLMs),due to their atomical
【作 者】
：
Honglai Li Xueping Wu Xidong Duan Xiangfeng Duan Anlian Pan 
【机 构】
：
School of Physics and Microelectronic Science,Hunan University,China
【出 处】
：
The 6th International Conference on Nanoscience and Technolo
【发表日期】
：
2015年5期
【关键词】
：
transition-metal dichalcogenides bandgap composition device 
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　　Transition-metal dichalcogenides(TMDs),such as MoS2,MoSe2,WS2,and WSe2,have recently attracted considerable interest as a new class of atomically thin 2D layered materials(2DLMs),due to their atomically thin geometry,unique electronic and optical properties and potential applications in integrated nanosystems.
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