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The poisson equation and continuity equation are used by employing the ISE-TCAD software, to research the electrical property and the drain current Ion/Ioff ratio of Al2O3/GaSb P-MOSFET.The simulation of a 0.75-μm-gate-length GaSb p-MOS device has reached a maximum drain current of 74.1 mA/mm,which is agreement well with the experimental result.The saturation velocity of the drain current can be increased by reducing the contact resistances between the drain/source electrodes.The gate capacitance and threshold voltage effect on drain current with respectively change in channel length and doping concentration in substrate.In addition, high Ion/Ioe ratios with more than three orders of magnitude and a lower off state with 10-15 mA/μm are obtained in the ideal simulation condition.GaSb based on high K dielectric is promising for a good candidate of p-channel device in Ⅲ-V MOSFETs.