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  5. Passivation of Si-based structures in KCN and HCN solutions and its application on more types of sol

Passivation of Si-based structures in KCN and HCN solutions and its application on more types of sol

来源 :2nd International congress on advanced materials(AM2013)第二届国 | 被引量 : 0次 | 上传用户：zxcasd456
【摘 要】
：
The contribution deals with preparation and investigation of very thin silicon dioxide films in the surface region of a-Si:H,c-Si and poly-Si semiconductors using more types of oxygen plasma and low e
【作 者】
：
Emil Pin(o)ík Hikaru Kobayashi Jaroslav Rusn(a)k Masao Takahashi R(o)bert Brunner Stanislav Jure(c)ka 
【机 构】
：
Institute of Physics,SAS,Dubravska cesta 9,845 11 Bratislava,Slovak Republic
【出 处】
：
2nd International congress on advanced materials(AM2013)第二届国
【发表日期】
：
2013年12期
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　　The contribution deals with preparation and investigation of very thin silicon dioxide films in the surface region of a-Si:H,c-Si and poly-Si semiconductors using more types of oxygen plasma and low energy ion beam sources,and chemical solutions.Dominant aim is focused on investigation of oxide/semiconductor interface properties.
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