Improved Al2O3 Dielectric Properties using Remote Plasma Atomic Layer Deposition with Negative-Biase

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：pxh504705648

【摘要】

：

Atomic layer deposition (ALD) has been a industry-standard deposition method because it can provide precise thickness control as well as good step coverage.

【作者】

：

Sanghyun Woo Hyungchul Kim Jaesang Lee Hyerin Lee

【机构】

：

Division of Materials Science and Engineering, Hanyang University, 17 Haengdang-Dong, Seongdong-Gu,S

【出处】

：

2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年9期

【关键词】

：

Atomic Layer Deposition High-k gate dielectric Negative-Biased DC power

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Atomic layer deposition (ALD) has been a industry-standard deposition method because it can provide precise thickness control as well as good step coverage.

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Improved Al2O3 Dielectric Properties using Remote Plasma Atomic Layer Deposition with Negative-Biase

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