【摘 要】
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At present,grain boundary defect is one of the main crystal defects in the crystal of CdZnTe.People have investigated CZT crystals for more than 20 years,bu
【出 处】
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第六届海内外中华青年材料科学技术研讨会暨第十五届全国青年材料科学技术研讨会
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At present,grain boundary defect is one of the main crystal defects in the crystal of CdZnTe.People have investigated CZT crystals for more than 20 years,but little study have been made to investigate grain boundaries in CZT crystals.We used IR transmission image to observe microstructure of triple junction of grain boundaries,compared with other grain boundaries.We used I-V measurement at different positions and different bias voltage,and LBIC and IBIC technique to character its relative collection efficiency.The stripe of Te in triple junction of grain boundary is the reason why the leak current is much higher.The influence of grain boundary to resistivity within low voltage is not obvious,but with the bias voltage increasing,the leak current increases significantly.The relative collection efficiency in grain boundary zone are lower than that in bulk crystal zone.
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