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  5. Structure and Luminescence Properties of Ag-implanted ZnO Nanowires

Structure and Luminescence Properties of Ag-implanted ZnO Nanowires

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：ffgghhaz
【摘 要】
：
Recently,Ag-doped one-dimensional (1D) ZnO Nanomaterial has been reported to be able to fabricate field effect transistor,gas sensor,diodes with all-ZnO-based p-n junctions,etc.
【作 者】
：
Xian Chen Yong Zhao 
【机 构】
：
Department of Physics, Nanchang University, Nanchang, China
【出 处】
：
2011年第三届微电子及等离子体技术国际会议
【发表日期】
：
2011年9期
【关键词】
：
ZnO nanowires ion implantation Structure Photoluminescence 
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Recently,Ag-doped one-dimensional (1D) ZnO Nanomaterial has been reported to be able to fabricate field effect transistor,gas sensor,diodes with all-ZnO-based p-n junctions,etc.
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