Key Technology Development and Future Prospect for High-Voltage Light-Emitting Diodes

来源 :第十届中国国际半导体照明论坛 | 被引量 : 0次 | 上传用户：jplang

【摘要】

：

　　In this work,we have investigated various characteristics of the isolation trenches,such as surface roughness of sidewall,etching depth,inclined angle and d

【作者】

：

Sufen Cheng Jin Xu Jiangbo Wang Rong Liu

【机构】

：

HCSemiTekCorporation,8BinhuRoad,EastLakeHi-techDevelopmentZone,Wuhan430223,P.R.China

【出处】

：

第十届中国国际半导体照明论坛

【发表日期】

：

2013年11期

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　　In this work,we have investigated various characteristics of the isolation trenches,such as surface roughness of sidewall,etching depth,inclined angle and distribution pattern,and their effects on the performance of HV LEDs.Through optimizing these physical properties of isolation trenches,18V HV-LED chips (20*45mil) with excellent performance has been fabricated.Then the optoelectronic properties of HVLEDs chips obtained are characterized.Lastly,the prospects for the fabrication technology and application of HV-LEDs in the future are discussed.

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Key Technology Development and Future Prospect for High-Voltage Light-Emitting Diodes

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