Disorder And Raman Scattering In Reactively Sputtered ZnO

来源 :2015台湾物理年会 | 被引量 : 0次 | 上传用户：13439718

【摘要】

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【作者】

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謝至中何易恒林昀蔚黃于真陳俏蒙黃玉林

【机构】

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物理系應用物理碩士班,國立東華大學,Hualien,Taiwan 物理學系,國立東華大學,Hual

【出处】

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2015台湾物理年会

【发表日期】

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2015年5期

【关键词】

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Raman scattering photoluminescence electron-phonon coupling ZnO

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　　Zinc oxide(ZnO)is a polar semiconductor having a wide direct bandgap Eg=3.37eV at room temperature.The exciton binding energy as high as 60meV and strong electron-phonon interaction lead to advantageous optical and optoelectronic properties,making ZnO a highly attractive candidate material for developing novel photonic devices.

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Disorder And Raman Scattering In Reactively Sputtered ZnO

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