【摘 要】
：
One-dimensional(1D)nanostructured materials with high surface area to volume ratio,such like nanowires,nanobelts,and nanotubes,reveal different physical and chemical properties from bulk materials and
【机 构】
：
material science and engineering,National Tsing Hua University,Hsinchu,Taiwan
论文部分内容阅读
One-dimensional(1D)nanostructured materials with high surface area to volume ratio,such like nanowires,nanobelts,and nanotubes,reveal different physical and chemical properties from bulk materials and have been demonstrated in various applications including field emission,lasers,interconnection in electronics,photovoltaics,resistive random-access memory(RRAM),and kinds of sensors.
其他文献
Titanium dioxide(TiO 2)is an n-type semiconductor with a bandgap energy of about 3.0-3.2 eV.Nanostructural TiO2 materials such as TiO2 nanospheres,nanotubes,nanowires,and nanorods have been widely app
Plate-like and granular shapes aluminum-doped zinc oxide(AZO)nanostructure powder(NP),Zn0.97Al0.03O,was synthesized using a chemical precipitation method.We used reactants of zinc nitrate and aluminum
A series of carbon supported Platinum catalysts with novel crystal structure were developed for hydrogen storage applications.
A natural and low-cost surface enhance Raman scattering(SERS)substrate was prepared by vapor depositing gold on Cicada wings.
We consider adsorbates on metallic armchair-graphene nanoribbons(AGNRs).An adsorbed atom on a nodal site of the gapless subband in the AGNR is found to induce a bound state.
Graphene,has shown outstanding physical properties being a promising candidate material for a variety of electronic applications.Up to date,there are several issues related to the material synthesis a
Indium selenide,as a group Ⅲ-Ⅳ semiconductor,is attracted much attention recently,due to its high photoresponsivity,indicating in optoelectronic devices.
Graphene devices on standard SiO/Si substrates are facing a bottleneck.These kind of devices can only show the primary characteristics of graphene,and is far away from exhibiting some intrinsic proper
Cu SbSe is a p-type semiconductor with a narrow band gap near 0.3 eV,and has been found to be a promising thermoelectric material at medium temperatures.
Molybdenum disulfide(MoS)and tungsten diselenide(WSe)are prototypical layered two-dimensional transition metal dichalcogenide(TMD)materials,with each layer consisting of three atomic planes.