Tunable p-type Mg doping in GaN monolayer nanosheet

• 作 者: YutingPeng[1]CongxinXia[2]ShuyiWei[1]YuJia[3]
• 机 构: Department of Physics,Henan Normal University,Xinxiang,Henan 453007,China
• 出 处: 中国物理学会2013年秋季学术会议
• 发表日期: 2013年期

　　In recent years,wurtzite GaN and related Ⅲ–V compound semiconductors have attracted considerable attention in high-brightness light-emitting diodes(LEDs)and laser diodes(LDs)emitting from the green to ultraviolet spectral range due to their wide band gap.