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In order to further improve the performance of industrial n-type bifacial solar cells beyond 20%, the importance of the related Diffusion processes are trending toward a wide range of more or less cost effective solutions.In most of cases, Diffusion processes used for bifacial n-type cells can be separated in 3 different types: The Boron diffusion to build-up the p/n junction by creating the emitter part of the n-type cell, the Phosphorous diffusion to enhance the current collection by producing a Back Surface Field and the thermal oxidation process to improve the passivation by reducing the recombination at the interface between Silicon and Silicon Nitride.