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Nowadays much attention has been paid to microcrystalline silicon(μc-Si:H)and nanocrystalline silicon(nc-Si:H)thin films in view of both physics and applications such as solar-energy conversion devices, memory devices and display devices[1-3].The nc-Si:H films can be grown on various substrate materials at low temperatures by plasma-enhanced chemical vapor deposition(PECVD).However,the deposition of nc-Si:H film generally starts with an amorphous incubation phase,followed by a crystallization phase.