【摘 要】
：
The effects of pre-stress field and surface stress on the thermal and electrical properties for a rectangular silicon nanowire are investigated theoreticall
【机 构】
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DepartmentofEngineeringMechanicsandKeyLaboratoryofSoftMachinesandSmartDevicesofZhejiangProvince,Zhej
【出 处】
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The 5th Asian Conference on Mechanics of Functional Material
论文部分内容阅读
The effects of pre-stress field and surface stress on the thermal and electrical properties for a rectangular silicon nanowire are investigated theoretically.The continuum elastic model is employed to calculate the spatially confmed phonon properties.The acoustoelastic effects and surface energy effects are taken into account in calculating the phonon properties of silicon nanowires.Since the thermal and electric properties such as the thermal conductivity and the carder mobility,are associated with phonon properties of semiconductors,the phonon thermal conductivity,electron-acoustic phonon scattering rate and the carrier mobility are obtained for silicon nanowires under prestress fields and surface stress.The numerical results show that the stress fields have a significant influence on the phonon properties such as the phonon dispersion relation,density of state as well as the group velocity,leading to completely altering the thermal conductivity and the carrier mobility.For the example,a positive prestress reduces the phonon energy while a negative one increases the phonon energy.
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