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  5. Analysis of the Local Discontinuous Galerkin Method for the Drift-diffusion Model of Semiconductor D

Analysis of the Local Discontinuous Galerkin Method for the Drift-diffusion Model of Semiconductor D

来源 :第八届工业与应用数学国际大会 | 被引量 : 0次 | 上传用户：fjlysy
【摘 要】
：
In this talk we consider both the semi-discrete and fully discrete local discontinuous Galerkin(LDG)schemes for the drift-diffusion(DD)model of one dimensional semiconductor devices.
【作 者】
：
Liu Yunxian Shu Chi-Wang 
【机 构】
：
Shandong Univ. Brown Univ.
【出 处】
：
第八届工业与应用数学国际大会
【发表日期】
：
2015年5期
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　　In this talk we consider both the semi-discrete and fully discrete local discontinuous Galerkin(LDG)schemes for the drift-diffusion(DD)model of one dimensional semiconductor devices.
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