Multi-Deposition Effect:From Diode To Memristor

来源 :2015台湾物理年会 | 被引量 : 0次 | 上传用户：qingfengliangban

【摘要】

：

　　Resistive switching random access memory(ReRAM)is one of the most promising candidates for next generation nonvolatile memory due to simple structure(metal/

【作者】

：

Teng-Yu Su Yu-Chuan Shih Henry Medina Jian-Shiou Huang Yu-Lun Chueh

【机构】

：

material science and engineering,National Tsing Hua University,Hsinchu,Taiwan

【出处】

：

2015台湾物理年会

【发表日期】

：

2015年期

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　　Resistive switching random access memory(ReRAM)is one of the most promising candidates for next generation nonvolatile memory due to simple structure(metal/insulator/metal),fast operation speed,high endurance and so on.

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