Achieving time-of-flight mobilities for amorphous organic semiconductors in a thin film transistor c

来源 :第八届全国暨华人有机分子和聚合物发光与光电特性学术会议 | 被引量 : 0次 | 上传用户：tianwang782

【摘要】

：

　　We observe bulk-like hole transport in amorphous organic semiconductors in a thin film transistor (TFT) configuration.Five different organic hole transporte

【作者】

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苏树江陈耀谦李嘉轩

【机构】

：

物理系及先进材料研究所中国香港九龙塘香港浸会大学

【出处】

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第八届全国暨华人有机分子和聚合物发光与光电特性学术会议

【发表日期】

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2013年7期

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论文部分内容阅读

　　We observe bulk-like hole transport in amorphous organic semiconductors in a thin film transistor (TFT) configuration.Five different organic hole transporters (HTs) commonly used in organic light-emitting diodes are investigated.When these HTs are deposited on SiO2 gate dielectric layer, the TFT mobilities are 1-2 orders of magnitude smaller than those obtained from bulk films (3-8 lm) using time-of-flight (TOF) technique.

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Achieving time-of-flight mobilities for amorphous organic semiconductors in a thin film transistor c

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