Optical Characterization of n-and p-type In0.14Ga0.86As0.13Sb0.87 Epitaxial Layers for Infrared Devi

来源 :第十届中红外光电子材料与器件国际会议 | 被引量 : 0次 | 上传用户：zr0156268

【作者】

：

M.L.Gomez-Herrera A.Duran-Ledezma Y.E.Bravo-Garcia P.Rodriguez-Fragoso J.L.Herrera-Perez A.Cruz-Orea I.Riech J.Diaz-Reyes J.G.Mendoza-Alvarez

【机构】

：

Facultad de Ingenieria.Universidad Autonoma de Queretaro.Queretaro.Mexico

【出处】

：

第十届中红外光电子材料与器件国际会议

【发表日期】

：

2010年4期

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