【摘 要】
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Compared with the conventional plane LEDs,the nanorods LEDs shows the poorer electrical properties.The dangling bonds at the side wall of nanorods will not only lead to the serious leakage current,but
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Compared with the conventional plane LEDs,the nanorods LEDs shows the poorer electrical properties.The dangling bonds at the side wall of nanorods will not only lead to the serious leakage current,but also the depletion of the holes density in p-GaN layer.It is necessary to passivate the dangling bonds to improve the electrical performance of nanorods LEDs.In this paper,we study the influence of SiO2 and SiNx passivation layers with different thickness on the electrical properties of GaN-based nanorods LEDs.
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