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Tailoring Magnetic Doping in the Topological Insulator Bi2Se3
【机 构】
:
BeijingNationalLaboratoryforCondensedMatterPhysicsandInstituteofPhysics,ChineseAcademyofSciences,Bei
【出 处】
:
第十一届国际凝聚态理论与计算材料学会议
【发表日期】
:
2012年8期
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