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2-3 μm InP-based Pseudomorphic and Metamorphic In(Ga)As(Bi) Quantum Wells
【机 构】
：
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and
【出 处】
：
第七届铋化物半导体国际研讨会(7th International Workshop on Bismuth-contain
【发表日期】
：
2016年11期
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