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  5. Structural Evolution of Single Crystal Silicon under High Pressure Studied by In-house Four-circle S

Structural Evolution of Single Crystal Silicon under High Pressure Studied by In-house Four-circle S

来源 :第26届国际高压科学技术大会、第8届亚洲高压科技学术会议暨第19届中国高压科学技术会议(The 26th Interna | 被引量 : 0次 | 上传用户：jljc123
【摘 要】
：
The structural evolution in silicon single crystal up to 3.4 GPa was investigated by four-circle singlecrystal X-ray diffractometers equipped with a diamond anvil cel1(DAC)at room temperature(see Fig.
【作 者】
：
Hao Jia Zheng Xia Changzeng Fan 
【机 构】
：
State Key Laboratory of Metastable Materials Science and Technology,Yanshan University,Qinhuangdao 0
【出 处】
：
第26届国际高压科学技术大会、第8届亚洲高压科技学术会议暨第19届中国高压科学技术会议(The 26th Interna
【发表日期】
：
2017年10期
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　　The structural evolution in silicon single crystal up to 3.4 GPa was investigated by four-circle singlecrystal X-ray diffractometers equipped with a diamond anvil cel1(DAC)at room temperature(see Fig.1a and b).
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