Growth of 3C-SiC Films in a Novel Warm-wall Multi-wafer LPCVD Reactor

• 作 者: Guoguo Yan Zhanguo Wang Guosheng Sun Xinfang Liu Feng Zhang Lin Dong Liu Zheng Wanshun Zhao Lei Wang Xiguang Li
• 机 构: Novel Semiconductor Material Laboratory, Institute of Semiconductors, Chinese Academy of Sciences Be
• 出 处: 第十七届全国化合物半导体材料微波器件和光电器件学术会议
• 发表日期: 2012年11期
• 关键词: 3C-SiC Multi-wafer Heteroepitaxial growth WLPCVD Uniformity

　　Multi-wafer heteroepitaxial growth of 3C-SiC layers on Si(lll) substrates were performed by employing a novel home-made warm-wall low pressure chemical vapor deposition (WLPCVD) system with a rotating susceptor which was designed to support up to six 50 mm-diameter wafers.A set of experiments were done with the temperature fixed at 900°C with the C/Si ratio of ranging from I to 6.When the C/Si ratio was 3,3C-SiC wafers with smooth surface can be obtained.Atomic force microscopy (AFM) scans indicated an atomically smooth surface with a roughness (RMS) of 5.74 nm (5x5μm2).Also,to study the uniformity of the multi-wafer system,we dealt with the data of thickness obtained with ellipsometry.It was shown that when we get each wafer rotated,we would obtain 3C-SiC epilayers with good thickness uniformity.