Study of Surface Diffusion in Epitaxial Growth of Semiconductor Nanomaterials by Cathodoluminescence

来源 :The 6th International Conference on Nanoscience and Technolo | 被引量 : 0次 | 上传用户：doubaosong

【摘要】

：

　　Surface diffusion usually plays a critical role in the epitaxial growth process of semiconductor nanomaterials,dominating their morphologies and influencing

【作者】

：

JianyuWang[1]YaoYin[1]SunHuabin[1]DakuanZhang[1]PengChen[1]JunzhuanWang[1]YoudouZhengTakashiSekiguchi[2]YiSh[1]

【机构】

：

School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,China

【出处】

：

The 6th International Conference on Nanoscience and Technolo

【发表日期】

：

2015年期

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　　Surface diffusion usually plays a critical role in the epitaxial growth process of semiconductor nanomaterials,dominating their morphologies and influencing basic properties.Cathodoluminescence measurement provides an important tool to scan the profile of element composition with high spatial resolution.In this talk,we mainly report on the studies of the surface diffusions occurred in the epitaxial growth process of ZnO and InGaN nanowires by using cathodoluminescence.Our work exhibits the important role of surface diffusion in epitaxial growth,providing guidelines for controllable atom incorporation and property design in semiconductor nanomaterials.

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