Uniaxial Stress Influence on 2D Electrons Concentration and Mobility in n-GaAs/AlGaAs:Si in the Dark

来源 :第26届国际高压科学技术大会、第8届亚洲高压科技学术会议暨第19届中国高压科学技术会议(The 26th Interna | 被引量 : 0次 | 上传用户：zhsotanlb

【摘要】

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【作者】

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Bogdanov Evgeny Minina Natalia

【机构】

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Department of Low Temperature Physics and Superconductivity,Lomonosov Moscow State University,Moscow

【出处】

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第26届国际高压科学技术大会、第8届亚洲高压科技学术会议暨第19届中国高压科学技术会议(The 26th Interna

【发表日期】

：

2017年10期

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　　High quality n-GaAs/Al0.29Ga0.71As:Si single heterostructures,grown by MBE epitaxy on(001)GaAs substrate and characterized(at T = 4.2 K in the dark)by initial electron concentration n = 2·1011 cm-2 and mobility μdark = 2.2·105 cm2/V/s,were investigated under external [110] uniaxial compression up to P = 3.5 kbar in the dark and after illumination.

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Uniaxial Stress Influence on 2D Electrons Concentration and Mobility in n-GaAs/AlGaAs:Si in the Dark

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