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用溶胶-凝胶法(sol-gel)制备掺杂浓度(1~15)mol%的钾和镁交替掺杂钛酸锶钡(BST)薄膜,研究掺杂浓度对薄膜结构和介电性能的影响。X射线衍射(XRD)表明,薄膜为钙钛矿结构。扫描电镜(SEM)显示,薄膜致密、晶粒大小均匀、低浓度下薄膜表面更平整光滑。随着浓度的增加,晶化逐渐减弱,平均晶粒大小和介电损耗呈减小趋势。交替掺杂结合了钾掺杂高调谐率和镁掺杂低介电损耗的优点,明显提高了优质因子。5 mol%对应最佳综合介电性能,在–20~20V范围内,介电损耗小于1.63%,调谐率为40.9%,可满足微波调谐需要。同时,就有关机理进行了讨论。
The barium strontium titanate (BST) films were alternately doped with potassium and magnesium with the doping concentration (1 ~ 15) mol% by sol-gel method. The influence of doping concentration on the structure and dielectric properties influences. X-ray diffraction (XRD) showed that the film was of perovskite structure. Scanning electron microscopy (SEM) shows that the film is dense and the grain size is uniform, and the film surface is smoother and smoother under low concentration. With the increase of concentration, crystallization gradually weakened, the average grain size and dielectric loss tended to decrease. Alternating doping combines the advantages of high doping rates of potassium doping and low dielectric loss of magnesium doping with significantly higher quality factors. 5 mol% corresponds to the best overall dielectric performance. The dielectric loss is less than 1.63% and the tuning rate is 40.9% in the range of -20 ~ 20V, which can meet the needs of microwave tuning. At the same time, the mechanism was discussed.