The electrical transport properties and optoelectronic devices of one-dimensional oxide semiconducto

• 作 者: Gang Cheng Shujie Wang Ke Cheng Zuliang Du
• 机 构: Key Lab for Special Functional Materials of Ministry of Education,Henan University,Kaifeng 475004,P.
• 出 处: 中国化学会第29届学术年会
• 发表日期: 2014年1期
• 关键词: oxide nanowre Schottky barrier surface states barrier structure electronic and o

　　The study on electronic and optoelectronic nanodevices of one-dimensional semiconductor nanomaterials is an important subject in nanoscience and nanotechnology.In recent years,our researches mainly focus on the preparation,assembly,transport properties,electronic and optoelectronic nanodevices of one-dimensional semiconductor nanostructures.It is found that the transport properties of oxide nanowires are dominated by Schottky barrier,and the Schottky barrier is dominated by surface states of nanowire; a new method has been developed to measure the surface states image of nanowire by using conductive atomic force microscopy [1].The 2-D geometry structure of Schottky barrier has been developed,which can explain the non-saturated photocurrent of ZnO nanowire Schottky barrier photodiode and the novel rectifying properties caused by asymmetric contact length.Some methods have been developed to modulate the surface states of oxide nanowire,such as the desorption of oxygen induced by UV light [2],the modulation of surface structure defects by surface passivation.Some high-performance electronic and optoelectronic nanodevices have been developed by using nanowire Schottky barrier,such as UV detectors with high sensitivity and fast recovery speed [3],gas sensors with ultrahigh sensitivity at room temperature,resistance switch with more than 7 orders on/off ratio.