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  5. Chemical Mechanical Planarization of Ge2Sb2Te5 Using Hard and Soft Pad in Acidic Slurry

Chemical Mechanical Planarization of Ge2Sb2Te5 Using Hard and Soft Pad in Acidic Slurry

来源 :International Conference on Nanoscience & Technology,China 2 | 被引量 : 0次 | 上传用户：lu_bright_zhang
【摘 要】
：
In this paper, Chemical mechanical planarization (CMP) of Ge2Sb2Te5 (GST) is investigated using hard pad (IC1010) and soft pad (Politex Reg) in the acidic slurry, respectively.For the CMP with blank w
【作 者】
：
Aodong He Bo liu Zhitang song Liangyong Wang Weili Liu Gaoming Feng Guanping Wu 
【机 构】
：
Shanghai Institute of Micro-system and Information Technology,Chinese Academy of Sciences,Shanghai 2
【出 处】
：
International Conference on Nanoscience & Technology,China 2
【发表日期】
：
2013年3期
【关键词】
：
Polishing Pad Chemical Mechanical Planarization Slurry 
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论文部分内容阅读
　　In this paper, Chemical mechanical planarization (CMP) of Ge2Sb2Te5 (GST) is investigated using hard pad (IC1010) and soft pad (Politex Reg) in the acidic slurry, respectively.For the CMP with blank wafer, it is found that the removal rate (RR) of a-GST increases with an increase of pressure for both pads.However, the RR of GST polished using IC1010 is far more than that of Politex Reg.
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