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通过化学溶液共沉积结合旋涂技术,制备了钴(Co)钡(Ba)掺杂的二氧化锰(MnO_2)薄膜电极材料,在微晶玻璃电容器接近击穿时断路,从而起到保护电路的作用。对材料进行表征的结果表明,此种方法制备的Co、Ba掺杂的MnO_2其热稳定温度达到850℃,高于纯MnO_2薄膜电极的600℃。材料的电阻率下降,在Co含量为8mol%时,材料的电阻率达到0.207Ω·cm,接近纯MnO_2的电阻率。MnO_2电极在玻璃基片上附着性良好且厚度均匀。材料的高热稳定性和低电阻率可提高其应用效率。
The cobalt (Co) barium-doped manganese dioxide (MnO 2) thin film electrode material was prepared by chemical solution co-deposition combined with spin-coating technology, which was cut off near the breakdown of the glass-ceramic capacitor to protect the circuit effect. The results show that the thermal stability temperature of Co, Ba doped MnO 2 prepared by this method reaches 850 ℃, which is higher than 600 ℃ of the pure MnO_2 thin film electrode. The resistivity of the material decreases. When the content of Co is 8mol%, the resistivity of the material reaches 0.207Ω · cm, which is close to the resistivity of pure MnO_2. The MnO 2 electrode has good adhesion and uniform thickness on the glass substrate. The material’s high thermal stability and low resistivity improve its application efficiency.