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  5. Determination of strain around the Nb/Si interface based on convergent-beam electron diffraction

Determination of strain around the Nb/Si interface based on convergent-beam electron diffraction

来源 :International Conference on Nanoscience & Technology,China 2 | 被引量 : 0次 | 上传用户：kalagou
【摘 要】
：
The stress field existed around Nb/S1 interface of microelectronic devices can alter carrier mobility, drive current and the reliability of devices.In additional to the improved spatial resolution, co
【作 者】
：
X.Li X.F.Tao L.L.Ren Z.Li 
【机 构】
：
School of Materials Science and Engineering,Central South University,Changsha 410083,China ;Nationai
【出 处】
：
International Conference on Nanoscience & Technology,China 2
【发表日期】
：
2013年3期
【关键词】
：
CBED TEMstrain strain kinematical simulation dynamical simulation 
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　　The stress field existed around Nb/S1 interface of microelectronic devices can alter carrier mobility, drive current and the reliability of devices.In additional to the improved spatial resolution, convergent-beam electron diffraction (CBED) for strain measurement gives us a wealth of 3-dimensional information not available in selected-area diffraction and high-resolution imaging.
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