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本文分析了Fe在InP晶体中的补偿过程,其中存在着一个从低阻N型半导体向半绝缘体过渡的过程。对掺Fe-InP晶体的电阻率ρ与掺入的Fe的重量百分比Fewt/。之间的关系作了粗略的定量计算。电阻率的计算值与实验值之间在一个数量级以内是相符合的。讨论了掺Fe-InP晶体电阻率的极大值和高阻晶体导电型号等几个有关的问题.
This paper analyzes the compensation process of Fe in InP crystal, in which there is a transition from low-resistance N-type semiconductor to semi-insulator. The resistivity ρ of doped Fe-InP crystals and the weight percentage of Fe doping Fewt /. The relationship between the rough made a quantitative calculation. The calculated resistivity is within one order of magnitude of the experimental value. Several problems related to the maximum resistivity of doped Fe-InP crystal and the conductivity type of high resistance crystal are discussed.