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本文研究了N-I-P型探测器的表面现象与反向电流的关系。若只考虑表面复合速度,忽略反型层的影响,而在电场作用下表面复合速度对光谱性能的影响的计算结果与实验结果又不符合,则说明表面现象不能只用表面复合速度来解释。此外,用克里斯坦森(H.Christenson)方法观察了反型层与沟道的形成,并对反向电流产生的原因作了定性的解释。
In this paper, the relationship between surface phenomena and reverse current of N-I-P detector is studied. If we only consider the surface recombination velocity and neglect the influence of the inversion layer, the calculation results of the surface recombination velocity on the spectral performance under the action of the electric field do not accord with the experimental results, which means that the surface phenomenon can not be explained by the surface recombination velocity only. In addition, the formation of the inversion layer and channel was observed by the method of H. Christenson, and the reasons for the reverse current were qualitatively explained.